• image of Transistors - Bipolar (BJT) - Single>MJE801STU
  • image of Transistors - Bipolar (BJT) - Single>MJE801STU
MJE801STU
Transistors - Bipolar (BJT) - Single
onsemi
TRANS NPN DARL
-
Tube
-

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image of Transistors - Bipolar (BJT) - Single>MJE801STU
image of Transistors - Bipolar (BJT) - Single>MJE801STU
MJE801STU
Transistors - Bipolar (BJT) - Single
onsemi
TRANS NPN DARL
-
Tube
-
TYPEDESCRIPTION
Mfronsemi
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Power - Max40 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126-3
Base Product NumberMJE80

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